diff --git a/process_steps/process_lowtech/process_lowtech_shallow_trench_isolation.tex b/process_steps/process_lowtech/process_lowtech_shallow_trench_isolation.tex
index f7e91ca..cd5a8a9 100644
--- a/process_steps/process_lowtech/process_lowtech_shallow_trench_isolation.tex
+++ b/process_steps/process_lowtech/process_lowtech_shallow_trench_isolation.tex
@@ -15,7 +15,7 @@ \section{Shallow trench isolation}\label{sti_chapter}
 
 As can be seen in \autoref{nwell_target}, the n-well and the STI trench are supposed to have approximately the same depth but the n-well and p-well go down a little bit further.
 Because the n-well will be $\approx 4 \mu m$ in depth we have to match this with our trench depth.
-I order to allow a sufficiently low resistance of the ESD diode but at the same time a sufficient isolation of between the standard cells a trade-ff has been done.
+In order to allow a sufficiently low resistance of the ESD diode but at the same time a sufficient isolation of between the standard cells a trade-ff has been done.
 The targeted depth of the box isolation is $\approx 2 \mu m$.
 
 \begin{figure}[H]