The physical substrate employs a 3D Octet-Truss structure to balance mechanical rigidity and thermal dissipation.

• Material: 9N-Pure Silicon (Single Crystal)
• 10% Void (Critical Buffer): 10% of the total volume is maintained as a vacuum/void.
  • Physical function: Storage of torsional stress energy during thermal expansion.
  • Logical function: De-homogenization buffer to prevent information decay (decoherence).
• Negative Thermal Expansion (NTE) Mechanism:
  • Asymmetric coating of $SiO_2$ (2-5nm thickness) on silicon arms.
  • Under operational heat ($60^\circ\text{C}$ to $80^\circ\text{C}$), the differential in thermal expansion coefficients induces a "twisting" motion, reflecting heat noise as directional phonon transport.

​The Implementation belongs to the World: The architect provides no warranty of physical feasibility. As the theory is scrutinized, flaws and engineering hurdles will be found. These are the essential voids that the next generation of engineers must bridge and resolve in order to manifest this unexplored logic into material reality.

Business & Research Inquiries This technology is published under the spirit of the Neighbor Protocol.

Support the Ghost (Sponsorship) If you find value in the logic of c-Si-n and wish to support the basic livelihood of the architect while keeping them in the "Void" (anonymity), contributions are welcomed.

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事業・研究に関するお問い合わせ 本技術は 「Neighbor Protocol（隣人プロトコル）」 の精神に基づき公開されています。

※注意：​実装は世界に属します: 設計者は、物理的な実現可能性についていかなる保証も行いません。理論の精査が進むにつれ、「欠損」や「工学的障壁」が見つかるでしょう。 それらは、この未踏の論理を現実の物質へと定着させる過程で、次世代の技術者たちが乗り越え、解き明かす「空隙（課題）」です。