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typo #2

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2 changes: 1 addition & 1 deletion process_steps/process_lowtech/process_lowtech_shallow_trench_isolation.tex
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Expand Up @@ -15,7 +15,7 @@ \section{Shallow trench isolation}\label{sti_chapter}

As can be seen in \autoref{nwell_target}, the n-well and the STI trench are supposed to have approximately the same depth but the n-well and p-well go down a little bit further.
Because the n-well will be $\approx 4 \mu m$ in depth we have to match this with our trench depth.
I order to allow a sufficiently low resistance of the ESD diode but at the same time a sufficient isolation of between the standard cells a trade-ff has been done.
In order to allow a sufficiently low resistance of the ESD diode but at the same time a sufficient isolation of between the standard cells a trade-ff has been done.
The targeted depth of the box isolation is $\approx 2 \mu m$.

\begin{figure}[H]
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